The research team, led by Christian Wetzel, professor of physics and the Wellfleet Constellation Professor of Future Chips at Rensselaer, etched a nanoscale pattern at the interface between the LED's sapphire base and the layer of gallium nitride (GaN) that gives the LED its green color. Overall, the new technique results in green LEDs with significant enhancements in light extraction, internal efficiency, and light output.
The discovery brings Wetzel one step closer to his goal of developing a high-performance, low-cost green LED.
"Green LEDs are proving much more challenging to create than academia and industry ever imagined," Wetzel said. "Every computer monitor and television produces its picture by using red, blue, and green. We already have powerful, inexpensive red and blue LEDs. Once we develop a similar green LED, it should lead to a new generation of high-performance, energy-efficient display and illumination devices. This new research finding is an important step in the right direction."
Results of the study were published recently in the journal Applied Physics Letters, and are featured in the April 25 issue of the Virtual Journal of Nanoscale Science & Technology, published by the American Institute of Physics and the American Physical Society.
Story Source:
The above story is reprinted (with editorial adaptations by ScienceDaily staff) from materials provided by Rensselaer Polytechnic Institute.
Journal Reference:
Yufeng Li, Shi You, Mingwei Zhu, Liang Zhao, Wenting Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, C. Wetzel. Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire. Applied Physics Letters, 2011; 98 (15): 151102 DOI: 10.1063/1.3579255Note: If no author is given, the source is cited instead.
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