Showing posts with label clock. Show all posts
Showing posts with label clock. Show all posts

Thursday, 10 November 2011

One clock with two times: When quantum mechanics meets general relativity

ScienceDaily (Oct. 20, 2011) — The unification of quantum mechanics and Einstein's general relativity is one of the most exciting and still open questions in modern physics. General relativity, the joint theory of gravity, space and time gives predictions that become clearly evident on a cosmic scale of stars and galaxies. Quantum effects, on the other hand, are fragile and are typically observed on small scales, e.g. when considering single particles and atoms. That is why it is very hard to test the interplay between quantum mechanics and general relativity.

Now theoretical physicists led by Caslav Brukner at the University of Vienna propose a novel experiment which can probe the overlap of the two theories. The focus of the work is to measure the general relativistic notion of time on a quantum scale.

The findings were recently published in Nature Communications.

Time in general relativity

One of the counterintuitive predictions of Einstein's general relativity is that gravity distorts the flow of time. The theory predicts that clocks tick slower near a massive body and tick faster the further they are away from the mass. This effect results in a so-called "twin paradox": if one twin moves out to live at a higher altitude, he will age faster than the other twin who remains on the ground. This effect has been precisely verified in classical experiments, but not in conjunction with quantum effects, which is the aim of the newly proposed experiment.

Quantum interference and complementarity

The Viennese group of researchers wants to exploit the extraordinary possibility that a single quantum particle can lose the classical property of having a well-defined position, or as phrased in quantum mechanical terms: it can be in a "superposition." This allows for wave-like effects, called interference, with a single particle. However, if the position of the particle is measured, or even if it can in principle be known, this effect is lost. In other words, it is not possible to observe interference and simultaneously know the position of the particle. Such a connection between information and interference is an example of quantum complementarity -- a principle proposed by Niels Bohr. The experimental proposal now published in "Nature Communications" combines this principle with the "twin paradox" of general relativity.

Einstein's "twin paradox" for a quantum "only child"

The team at the University of Vienna considers a single clock (any particle with evolving internal degrees of freedom such as spin) which is brought in a superposition of two locations -- one closer and one further away from the surface of Earth. According to general relativity, the clock ticks at different rates in the two locations, in the same way as the two twins would age differently. But since the time measured by the clock reveals the information on where the clock was located, the interference and the wave-nature of the clock is lost. "It is the twin paradox for a quantum 'only child', and it requires general relativity as well as quantum mechanics. Such an interplay between the two theories has never been probed in experiments yet" -- says Magdalena Zych, the lead author of the paper and member of the Vienna Doctoral Program CoQuS. It is therefore the first proposal for an experiment that allows testing the genuine general relativistic notion of time in conjunction with quantum complementarity.

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Story Source:

The above story is reprinted from materials provided by University of Vienna.

Note: ScienceDaily reserves the right to edit materials for content and length. For further information, please contact the source cited above.

Journal Reference:

Magdalena Zych, Fabio Costa, Igor Pikovski, Caslav Brukner. Quantum interferometric visibility as a witness of general relativistic proper time. Nature Communications, 2011; 2: 505 DOI: 10.1038/ncomms1498

Note: If no author is given, the source is cited instead.

Disclaimer: Views expressed in this article do not necessarily reflect those of ScienceDaily or its staff.


View the original article here

Tuesday, 17 May 2011

Toward faster transistors: Physicists discover physical phenomenon that could boost computers' clock speed

ScienceDaily (May 15, 2011) — In the 1980s and '90s, competition in the computer industry was all about "clock speed" -- how many megahertz, and ultimately gigahertz, a chip could boast. But clock speeds stalled out almost 10 years ago: Chips that run faster also run hotter, and with existing technology, there seems to be no way to increase clock speed without causing chips to overheat.

In this week's issue of the journal Science, MIT researchers and their colleagues at the University of Augsburg in Germany report the discovery of a new physical phenomenon that could yield transistors with greatly enhanced capacitance -- a measure of the voltage required to move a charge. And that, in turn, could lead to the revival of clock speed as the measure of a computer's power.

In today's computer chips, transistors are made from semiconductors, such as silicon. Each transistor includes an electrode called the gate; applying a voltage to the gate causes electrons to accumulate underneath it. The electrons constitute a channel through which an electrical current can pass, turning the semiconductor into a conductor.

Capacitance measures how much charge accumulates below the gate for a given voltage. The power that a chip consumes, and the heat it gives off, are roughly proportional to the square of the gate's operating voltage. So lowering the voltage could drastically reduce the heat, creating new room to crank up the clock.

MIT Professor of Physics Raymond Ashoori and Lu Li, a postdoc and Pappalardo Fellow in his lab -- together with Christoph Richter, Stefan Paetel, Thilo Kopp and Jochen Mannhart of the University of Augsburg -- investigated the unusual physical system that results when lanthanum aluminate is grown on top of strontium titanate. Lanthanum aluminate consists of alternating layers of lanthanum oxide and aluminum oxide. The lanthanum-based layers have a slight positive charge; the aluminum-based layers, a slight negative charge. The result is a series of electric fields that all add up in the same direction, creating an electric potential between the top and bottom of the material.

Ordinarily, both lanthanum aluminate and strontium titanate are excellent insulators, meaning that they don't conduct electrical current. But physicists had speculated that if the lanthanum aluminate gets thick enough, its electrical potential would increase to the point that some electrons would have to move from the top of the material to the bottom, to prevent what's called a "polarization catastrophe." The result is a conductive channel at the juncture with the strontium titanate -- much like the one that forms when a transistor is switched on. So Ashoori and his collaborators decided to measure the capacitance between that channel and a gate electrode on top of the lanthanum aluminate.

They were amazed by what they found: Although their results were somewhat limited by their experimental apparatus, it may be that an infinitesimal change in voltage will cause a large amount of charge to enter the channel between the two materials. "The channel may suck in charge -- shoomp! Like a vacuum," Ashoori says. "And it operates at room temperature, which is the thing that really stunned us."

Indeed, the material's capacitance is so high that the researchers don't believe it can be explained by existing physics. "We've seen the same kind of thing in semiconductors," Ashoori says, "but that was a very pure sample, and the effect was very small. This is a super-dirty sample and a super-big effect." It's still not clear, Ashoori says, just why the effect is so big: "It could be a new quantum-mechanical effect or some unknown physics of the material."

There is one drawback to the system that the researchers investigated: While a lot of charge will move into the channel between materials with a slight change in voltage, it moves slowly -- much too slowly for the type of high-frequency switching that takes place in computer chips. That could be because the samples of the material are, as Ashoori says, "super dirty"; purer samples might exhibit less electrical resistance. But it's also possible that, if researchers can understand the physical phenomena underlying the material's remarkable capacitance, they may be able to reproduce them in more practical materials.

Triscone cautions that wholesale changes to the way computer chips are manufactured will inevitably face resistance. "So much money has been injected into the semiconductor industry for decades that to do something new, you need a really disruptive technology," he says.

"It's not going to revolutionize electronics tomorrow," Ashoori agrees. "But this mechanism exists, and once we know it exists, if we can understand what it is, we can try to engineer it."

Story Source:

The above story is reprinted (with editorial adaptations by ScienceDaily staff) from materials provided by Massachusetts Institute of Technology. The original article was written by Larry Hardesty, MIT News Office.

Journal Reference:

L. Li, C. Richter, S. Paetel, T. Kopp, J. Mannhart, R. C. Ashoori. Very Large Capacitance Enhancement in a Two-Dimensional Electron System. Science, 2011; 332 (6031): 825 DOI: 10.1126/science.1204168

Note: If no author is given, the source is cited instead.

Disclaimer: Views expressed in this article do not necessarily reflect those of ScienceDaily or its staff.


View the original article here

Toward faster transistors: Physicists discover physical phenomenon that could boost computers' clock speed

ScienceDaily (May 15, 2011) — In the 1980s and '90s, competition in the computer industry was all about "clock speed" -- how many megahertz, and ultimately gigahertz, a chip could boast. But clock speeds stalled out almost 10 years ago: Chips that run faster also run hotter, and with existing technology, there seems to be no way to increase clock speed without causing chips to overheat.

In this week's issue of the journal Science, MIT researchers and their colleagues at the University of Augsburg in Germany report the discovery of a new physical phenomenon that could yield transistors with greatly enhanced capacitance -- a measure of the voltage required to move a charge. And that, in turn, could lead to the revival of clock speed as the measure of a computer's power.

In today's computer chips, transistors are made from semiconductors, such as silicon. Each transistor includes an electrode called the gate; applying a voltage to the gate causes electrons to accumulate underneath it. The electrons constitute a channel through which an electrical current can pass, turning the semiconductor into a conductor.

Capacitance measures how much charge accumulates below the gate for a given voltage. The power that a chip consumes, and the heat it gives off, are roughly proportional to the square of the gate's operating voltage. So lowering the voltage could drastically reduce the heat, creating new room to crank up the clock.

MIT Professor of Physics Raymond Ashoori and Lu Li, a postdoc and Pappalardo Fellow in his lab -- together with Christoph Richter, Stefan Paetel, Thilo Kopp and Jochen Mannhart of the University of Augsburg -- investigated the unusual physical system that results when lanthanum aluminate is grown on top of strontium titanate. Lanthanum aluminate consists of alternating layers of lanthanum oxide and aluminum oxide. The lanthanum-based layers have a slight positive charge; the aluminum-based layers, a slight negative charge. The result is a series of electric fields that all add up in the same direction, creating an electric potential between the top and bottom of the material.

Ordinarily, both lanthanum aluminate and strontium titanate are excellent insulators, meaning that they don't conduct electrical current. But physicists had speculated that if the lanthanum aluminate gets thick enough, its electrical potential would increase to the point that some electrons would have to move from the top of the material to the bottom, to prevent what's called a "polarization catastrophe." The result is a conductive channel at the juncture with the strontium titanate -- much like the one that forms when a transistor is switched on. So Ashoori and his collaborators decided to measure the capacitance between that channel and a gate electrode on top of the lanthanum aluminate.

They were amazed by what they found: Although their results were somewhat limited by their experimental apparatus, it may be that an infinitesimal change in voltage will cause a large amount of charge to enter the channel between the two materials. "The channel may suck in charge -- shoomp! Like a vacuum," Ashoori says. "And it operates at room temperature, which is the thing that really stunned us."

Indeed, the material's capacitance is so high that the researchers don't believe it can be explained by existing physics. "We've seen the same kind of thing in semiconductors," Ashoori says, "but that was a very pure sample, and the effect was very small. This is a super-dirty sample and a super-big effect." It's still not clear, Ashoori says, just why the effect is so big: "It could be a new quantum-mechanical effect or some unknown physics of the material."

There is one drawback to the system that the researchers investigated: While a lot of charge will move into the channel between materials with a slight change in voltage, it moves slowly -- much too slowly for the type of high-frequency switching that takes place in computer chips. That could be because the samples of the material are, as Ashoori says, "super dirty"; purer samples might exhibit less electrical resistance. But it's also possible that, if researchers can understand the physical phenomena underlying the material's remarkable capacitance, they may be able to reproduce them in more practical materials.

Triscone cautions that wholesale changes to the way computer chips are manufactured will inevitably face resistance. "So much money has been injected into the semiconductor industry for decades that to do something new, you need a really disruptive technology," he says.

"It's not going to revolutionize electronics tomorrow," Ashoori agrees. "But this mechanism exists, and once we know it exists, if we can understand what it is, we can try to engineer it."

Story Source:

The above story is reprinted (with editorial adaptations by ScienceDaily staff) from materials provided by Massachusetts Institute of Technology. The original article was written by Larry Hardesty, MIT News Office.

Journal Reference:

L. Li, C. Richter, S. Paetel, T. Kopp, J. Mannhart, R. C. Ashoori. Very Large Capacitance Enhancement in a Two-Dimensional Electron System. Science, 2011; 332 (6031): 825 DOI: 10.1126/science.1204168

Note: If no author is given, the source is cited instead.

Disclaimer: Views expressed in this article do not necessarily reflect those of ScienceDaily or its staff.


View the original article here