Showing posts with label wavelength. Show all posts
Showing posts with label wavelength. Show all posts

Friday, 2 December 2011

NASA develops super-black material that absorbs light across multiple wavelength bands

ScienceDaily (Nov. 8, 2011) — NASA engineers have produced a material that absorbs on average more than 99 percent of the ultraviolet, visible, infrared, and far-infrared light that hits it -- a development that promises to open new frontiers in space technology.

The team of engineers at NASA's Goddard Space Flight Center in Greenbelt, Md., reported their findings recently at the SPIE Optics and Photonics conference, the largest interdisciplinary technical meeting in this discipline. The team has since reconfirmed the material's absorption capabilities in additional testing, said John Hagopian, who is leading the effort involving 10 Goddard technologists.

"The reflectance tests showed that our team had extended by 50 times the range of the material's absorption capabilities. Though other researchers are reporting near-perfect absorption levels mainly in the ultraviolet and visible, our material is darn near perfect across multiple wavelength bands, from the ultraviolet to the far infrared," Hagopian said. "No one else has achieved this milestone yet."

The nanotech-based coating is a thin layer of multi-walled carbon nanotubes, tiny hollow tubes made of pure carbon about 10,000 times thinner than a strand of human hair. They are positioned vertically on various substrate materials much like a shag rug. The team has grown the nanotubes on silicon, silicon nitride, titanium, and stainless steel, materials commonly used in space-based scientific instruments. (To grow carbon nanotubes, Goddard technologist Stephanie Getty applies a catalyst layer of iron to an underlayer on silicon, titanium, and other materials. She then heats the material in an oven to about 1,382 degrees Fahrenheit. While heating, the material is bathed in carbon-containing feedstock gas.)

The tests indicate that the nanotube material is especially useful for a variety of spaceflight applications where observing in multiple wavelength bands is important to scientific discovery. One such application is stray-light suppression. The tiny gaps between the tubes collect and trap background light to prevent it from reflecting off surfaces and interfering with the light that scientists actually want to measure. Because only a small fraction of light reflects off the coating, the human eye and sensitive detectors see the material as black.

In particular, the team found that the material absorbs 99.5 percent of the light in the ultraviolet and visible, dipping to 98 percent in the longer or far-infrared bands. "The advantage over other materials is that our material is from 10 to 100 times more absorbent, depending on the specific wavelength band," Hagopian said.

"We were a little surprised by the results," said Goddard engineer Manuel Quijada, who co-authored the SPIE paper and carried out the reflectance tests. "We knew it was absorbent. We just didn't think it would be this absorbent from the ultraviolet to the far infrared."

If used in detectors and other instrument components, the technology would allow scientists to gather hard-to-obtain measurements of objects so distant in the universe that astronomers no longer can see them in visible light or those in high-contrast areas, including planets in orbit around other stars, Hagopian said. Earth scientists studying the oceans and atmosphere also would benefit. More than 90 percent of the light Earth-monitoring instruments gather comes from the atmosphere, overwhelming the faint signal they are trying to retrieve.

Currently, instrument developers apply black paint to baffles and other components to help prevent stray light from ricocheting off surfaces. However, black paints absorb only 90 percent of the light that strikes it. The effect of multiple bounces makes the coating's overall advantage even larger, potentially resulting in hundreds of times less stray light.

In addition, black paints do not remain black when exposed to cryogenic temperatures. They take on a shiny, slightly silver quality, said Goddard scientist Ed Wollack, who is evaluating the carbon-nanotube material for use as a calibrator on far-infrared-sensing instruments that must operate in super-cold conditions to gather faint far-infrared signals emanating from objects in the very distant universe. If these instruments are not cold, thermal heat generated by the instrument and observatory, will swamp the faint infrared they are designed to collect.

Black materials also serve another important function on spacecraft instruments, particularly infrared-sensing instruments, added Goddard engineer Jim Tuttle. The blacker the material, the more heat it radiates away. In other words, super-black materials, like the carbon nanotube coating, can be used on devices that remove heat from instruments and radiate it away to deep space. This cools the instruments to lower temperatures, where they are more sensitive to faint signals.

To prevent the black paints from losing their absorption and radiative properties at long wavelengths, instrument developers currently use epoxies loaded with conductive metals to create a black coating. However, the mixture adds weight, always a concern for instrument developers. With the carbon-nanotube coating, however, the material is less dense and remains black without additives, and therefore is effective at absorbing light and removing heat. "This is a very promising material," Wollack said. "It's robust, lightweight, and extremely black. It is better than black paint by a long shot."

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The above story is reprinted from materials provided by NASA.

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Sunday, 10 July 2011

First telecommunications wavelength quantum dot laser grown on a silicon substrate

ScienceDaily (June 14, 2011) — A new generation of high-speed, silicon-based information technology has been brought a step closer by researchers in the Department of Electronic and Electrical Engineering at UCL and the London Centre for Nanotechnology. The team's research, published in the journal Nature Photonics, provides the first demonstration of an electrically driven, quantum dot laser grown directly on a silicon substrate (Si) with a wavelength (1300-nm) suitable for use in telecommunications.

Silicon is the most widely used material for the fabrication of active devices in electronics. However, the nature of its atomic structure makes it extremely hard to realise an efficient light source in this material.

As the speed and complexity of silicon electronics increases, it is becoming harder to interconnect large information processing systems using conventional copper electrical interconnects. For this reason the field of silicon photonics (the development of optical interconnects for use with silicon electronics) is becoming increasingly important.

The ideal light source for silicon photonics would be a semiconductor laser, for high efficiency, direct interfacing with silicon drive electronics and high-speed data modulation capability. To date, the most promising approach to a light source for silicon photonics has been the use of wafer bonding to join compound semiconductor laser materials from which lasers can be made to a silicon substrate.

Direct growth of compound semiconductor laser material on silicon would be an attractive route to full integration for silicon photonics. However, the large differences in crystal lattice constant between silicon and compound semiconductors cause dislocations in the crystal structure that result in low efficiency and short operating lifetime for semiconductor lasers.

The UCL group has overcome these difficulties by developing special layers which prevent these dislocations from reaching the laser layer together with a quantum dot laser gain layer. This has enabled them to demonstrate an electrically pumped 1,300 nm wavelength laser by direct epitaxial growth on silicon. In a recent paper in Optics Express (Vol. 19 Issue 12, pp.11381-11386 (2011)) they report an optical output power of over 15 mW per facet at room temperature.

In related work the group, working with device fabrication colleagues at the EPSRC National Centre for III-V Technologies, have demonstrated the first quantum dot laser on a germanium (Ge) substrate by direct epitaxial growth. The laser, reported in Nature Photonics , (DOI: 10.1038/NPHOTON.2011.120, 12 June 2009) is capable of continuous operation at temperatures up to 70 deg. C and has a continuous output power of over 25 mW per facet.

Leader of the epitaxy research that enabled the creation of these lasers and Royal Society University Research Fellow in the UCL Department of Electronic and Electrical Engineering, Dr Huiyun Liu, said: "The use of the quantum dot gain layer offers improved tolerance to residual dislocations relative to conventional quantum well structures. Our work on germanium should also permit practical lasers to be created on the Si/Ge substrates that are an important part of the roadmap for future silicon technology."

Head of the Photonics Group in the UCL Department of Electronic and Electrical Engineering, Principal Investigator in the London Centre for Nanotechnology and Director of the EPSRC Centre for Doctoral Training in Photonic Systems Development, Professor Alwyn Seeds, said: "The techniques that we have developed permit us to realise the Holy Grail of silicon photonics -- an efficient, electrically pumped, semiconductor laser integrated on a silicon substrate. Our future work will be aimed at combining these lasers with waveguides and drive electronics leading to a comprehensive technology for the integration of photonics with silicon electronics."

Story Source:

The above story is reprinted (with editorial adaptations by ScienceDaily staff) from materials provided by University College London - UCL.

Journal References:

Huiyun Liu, Ting Wang, Qi Jiang, Richard Hogg, Frank Tutu, Francesca Pozzi, Alwyn Seeds. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nature Photonics, 2011; DOI: 10.1038/nphoton.2011.120Ting Wang, Huiyun Liu, Andrew Lee, Francesca Pozzi, Alwyn Seeds. 13-µm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. Optics Express, 2011; 19 (12): 11381 DOI: 10.1364/OE.19.011381Huiyun Liu, Ting Wang, Qi Jiang, Richard Hogg, Frank Tutu, Francesca Pozzi, Alwyn Seeds. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nature Photonics, 2011; DOI: 10.1038/nphoton.2011.120

Note: If no author is given, the source is cited instead.

Disclaimer: Views expressed in this article do not necessarily reflect those of ScienceDaily or its staff.


View the original article here

Saturday, 9 July 2011

First telecommunications wavelength quantum dot laser grown on a silicon substrate

ScienceDaily (June 14, 2011) — A new generation of high-speed, silicon-based information technology has been brought a step closer by researchers in the Department of Electronic and Electrical Engineering at UCL and the London Centre for Nanotechnology. The team's research, published in the journal Nature Photonics, provides the first demonstration of an electrically driven, quantum dot laser grown directly on a silicon substrate (Si) with a wavelength (1300-nm) suitable for use in telecommunications.

Silicon is the most widely used material for the fabrication of active devices in electronics. However, the nature of its atomic structure makes it extremely hard to realise an efficient light source in this material.

As the speed and complexity of silicon electronics increases, it is becoming harder to interconnect large information processing systems using conventional copper electrical interconnects. For this reason the field of silicon photonics (the development of optical interconnects for use with silicon electronics) is becoming increasingly important.

The ideal light source for silicon photonics would be a semiconductor laser, for high efficiency, direct interfacing with silicon drive electronics and high-speed data modulation capability. To date, the most promising approach to a light source for silicon photonics has been the use of wafer bonding to join compound semiconductor laser materials from which lasers can be made to a silicon substrate.

Direct growth of compound semiconductor laser material on silicon would be an attractive route to full integration for silicon photonics. However, the large differences in crystal lattice constant between silicon and compound semiconductors cause dislocations in the crystal structure that result in low efficiency and short operating lifetime for semiconductor lasers.

The UCL group has overcome these difficulties by developing special layers which prevent these dislocations from reaching the laser layer together with a quantum dot laser gain layer. This has enabled them to demonstrate an electrically pumped 1,300 nm wavelength laser by direct epitaxial growth on silicon. In a recent paper in Optics Express (Vol. 19 Issue 12, pp.11381-11386 (2011)) they report an optical output power of over 15 mW per facet at room temperature.

In related work the group, working with device fabrication colleagues at the EPSRC National Centre for III-V Technologies, have demonstrated the first quantum dot laser on a germanium (Ge) substrate by direct epitaxial growth. The laser, reported in Nature Photonics , (DOI: 10.1038/NPHOTON.2011.120, 12 June 2009) is capable of continuous operation at temperatures up to 70 deg. C and has a continuous output power of over 25 mW per facet.

Leader of the epitaxy research that enabled the creation of these lasers and Royal Society University Research Fellow in the UCL Department of Electronic and Electrical Engineering, Dr Huiyun Liu, said: "The use of the quantum dot gain layer offers improved tolerance to residual dislocations relative to conventional quantum well structures. Our work on germanium should also permit practical lasers to be created on the Si/Ge substrates that are an important part of the roadmap for future silicon technology."

Head of the Photonics Group in the UCL Department of Electronic and Electrical Engineering, Principal Investigator in the London Centre for Nanotechnology and Director of the EPSRC Centre for Doctoral Training in Photonic Systems Development, Professor Alwyn Seeds, said: "The techniques that we have developed permit us to realise the Holy Grail of silicon photonics -- an efficient, electrically pumped, semiconductor laser integrated on a silicon substrate. Our future work will be aimed at combining these lasers with waveguides and drive electronics leading to a comprehensive technology for the integration of photonics with silicon electronics."

Story Source:

The above story is reprinted (with editorial adaptations by ScienceDaily staff) from materials provided by University College London - UCL.

Journal References:

Huiyun Liu, Ting Wang, Qi Jiang, Richard Hogg, Frank Tutu, Francesca Pozzi, Alwyn Seeds. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nature Photonics, 2011; DOI: 10.1038/nphoton.2011.120Ting Wang, Huiyun Liu, Andrew Lee, Francesca Pozzi, Alwyn Seeds. 13-µm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. Optics Express, 2011; 19 (12): 11381 DOI: 10.1364/OE.19.011381Huiyun Liu, Ting Wang, Qi Jiang, Richard Hogg, Frank Tutu, Francesca Pozzi, Alwyn Seeds. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nature Photonics, 2011; DOI: 10.1038/nphoton.2011.120

Note: If no author is given, the source is cited instead.

Disclaimer: Views expressed in this article do not necessarily reflect those of ScienceDaily or its staff.


View the original article here