Kitchen Gadget Inspires Scientist to Make More Effective Plastic Electronics

Fabricating single crystal organic field-effect transistors using ultra-thin polymer membrane for a gate insulator. In the upper row, the membrane is stretched over the transistor before vacuum is applied. In the lower row, the vacuum has been applied and the membrant is adhering to the organic crystal. Photos on the right are close-up views of the transistor, with the organic semiconductor crystal in red. (Credit: Credit: H. T. Yi, et. al.)

One day in 2010, Rutgers physicist Vitaly Podzorov watched a store employee showcase a kitchen gadget that vacuum-seals food in plastic. The demo stuck with him. The simple concept -- an airtight seal around pieces of food -- just might apply to his research: developing flexible electronics using lightweight organic semiconductors for products such as video displays or solar cells.

"Organic transistors, which switch or amplify electronic signals, hold promise for making video displays that bend like book pages or roll and unroll like posters," said Podzorov. But traditional methods of fabricating a part of the transistor known as the gate insulator often end up damaging the transistor's delicate semiconductor crystals.

Drawing inspiration from the food-storage gadget, Podzorov and his colleagues tried an experiment. They suspended a thin polymer membrane above the organic crystal and created a vacuum underneath, causing the membrane to collapse gently and evenly onto the crystal's surface. The result: a smooth, defect-free interface between the organic semiconductor and the gate insulator.

The researchers reported their success in the journal Advanced Materials. In the article,Podzorov and three colleagues describe how a single-crystal organic field effect transistor (OFET) made with this thin polymer gate insulator boosted electrical performance. The researchers further reported that they could remove and reapply membranes to the same crystal several times without degrading its surface.

Organic transistors electrically resemble silicon transistors in computer chips, but they are made of flexible carbon-based molecules that can be printed on sheets of plastic. Silicon transistors are made in rigid, brittle wafers of silicon.

The methods that scientists previously applied to organic transistor fabrication were based on silicon semiconductor processing, explained Podzorov, assistant professor in the Department of Physics and Astronomy, School of Arts and Sciences. These involved high temperatures, high-energy plasmas or chemical reactions, all of which could damage the delicate organic crystal surface and hinder the transistor's performance.

"People have tendencies to go with something they've known for a long time," he said. "In this case, it doesn't work right."

Podzorov's innovation builds upon a decade of Rutgers research in this field, including his invention of the first single crystal organic transistor in 2003. While his latest innovation is still a ways from commercial reality, he sees an immediate application in the classroom.

"Our technique takes 10 minutes," he said. "It should be exciting for students to actually build these devices and immediately see them work, all within one lab session."

Podzorov was actually trying to solve another problem when he first recalled the food packaging demo. He was thinking about how to protect organic crystals from airborne impurities when his lab shipped samples to collaborating scientists in California and overseas.

"We could place our samples between plastic sheets and pull a vacuum," he said. "Then I thought, 'why don't we try doing this for our gate insulator?'"

Funding for the research was provided by the U. S. Department of Energy and the Rutgers Institute for Advanced Materials and Devices for Nanotechnology. Collaborators in Podzorov's lab were postdoctoral researchers Hee Taek Yi and Yuanzhen Chen, and undergraduate student Krzysztof Czelen. The department's machine shop made a custom-designed vacuum chamber for the project

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The above story is reprinted from materials provided byRutgers University.

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Journal Reference:

1. H. T. Yi, Y. Chen, K. Czelen, V. Podzorov. Vacuum Lamination Approach to Fabrication of High-Performance Single-Crystal Organic Field-Effect Transistors. Advanced Materials, 2011; 23 (48): 5807 DOI:10.1002/adma.201103305

Bilayer Graphene Works as an Insulator: Research Has Potential Applications in Digital and Infrared Technologies

ScienceDaily  — A research team led by physicists at the University of California, Riverside has identified a property of "bilayer graphene" (BLG) that the researchers say is analogous to finding the Higgs boson in particle physics.

BLG is formed when two graphene sheets are stacked in a special manner. Like graphene, BLG has high current-carrying capacity, also known as high electron conductivity. The high current-carrying capacity results from the extremely high velocities that electrons can acquire in a graphene sheet.Graphene, nature's thinnest elastic material, is a one-atom thick sheet of carbon atoms arranged in a hexagonal lattice. Because of graphene's planar and chicken wire-like structure, sheets of it lend themselves well to stacking.

The physicists report online Jan. 22 in Nature Nanotechnology that in investigating BLG's properties they found that when the number of electrons on the BLG sheet is close to 0, the material becomes insulating (that is, it resists flow of electrical current) -- a finding that has implications for the use of graphene as an electronic material in the semiconductor and electronics industries.

"BLG becomes insulating because its electrons spontaneously organize themselves when their number is small," said Chun Ning (Jeanie) Lau, an associate professor of physics and astronomy and the lead author of the research paper. "Instead of moving around randomly, the electrons move in an orderly fashion. This is called 'spontaneous symmetry breaking' in physics, and is a very important concept since it is the same principle that 'endows' mass for particles in high energy physics."

Lau explained that a typical conductor has a huge number of electrons, which move around randomly, rather like a party with ten thousand guests with no assigned seats at dining tables. If the party only has four guests, however, then the guests will have to interact with each other and sit down at a table. Similarly, when BLG has only a few electrons the interactions cause the electrons to behave in an orderly manner.

New quantum particle

Allan MacDonald, the Sid W. Richardson Foundation Regents Chair in the Department of Physics at The University of Texas at Austin and a coauthor on the research paper, noted that team has measured the mass of a new type of massive quantum particle that can be found only inside BLG crystals.

"The physics which gives these particles their mass is closely analogous to the physics which makes the mass of a proton inside an atomic nucleus very much larger than the mass of the quarks from which it is formed," he said. "Our team's particle is made of electrons, however, not quarks."

MacDonald explained that the experiment the research team conducted was motivated by theoretical work which anticipated that new particles would emerge from the electron sea of a BLG crystal.

"Now that the eagerly anticipated particles have been found, future experiments will help settle an ongoing theoretical debate on their properties," he said.

Practical applications

An important finding of the research team is that the intrinsic "energy gap" in BLG grows with increasing magnetic field.

In solid state physics, an energy gap (or band gap) refers to an energy range in a solid where no electron states can exist. Generally, the size of the energy gap of a material determines whether it is a metal (no gap), semiconductor (small gap) or insulator (large gap). The presence of an energy gap in silicon is critical to the semiconductor industry since, for digital applications, engineers need to turn the device 'on' or conductive, and 'off' or insulating.

Single layer graphene (SLG) is gapless, however, and cannot be completely turned off because regardless of the number of electrons on SLG, it always remains metallic and a conductor.

"This is terribly disadvantageous from an electronics point of view," said Lau, a member of UC Riverside's Center for Nanoscale Science and Engineering. "BLG, on the other hand, can in fact be turned off. Our research is in the initial phase, and, presently, the band gap is still too small for practical applications. What is tremendously exciting though is that this work suggests a promising route -- trilayer graphene and tetralayer graphene, which are likely to have much larger energy gaps that can be used for digital and infrared technologies. We already have begun working with these materials."

Lau and MacDonald were joined in the research by J. Velasco Jr. (the first author of the research paper), L. Jing, W. Bao, Y. Lee, P. Kratz, V. Aji, M. Bockrath, and C. Varma at UCR; R. Stillwell and D. Smirnov at the National High Magnetic Field Laboratory, Tallahassee, Fla.; and Fan Zhang and J. Jung at The University of Texas at Austin.

The research was supported by grants from the National Science Foundation, Office of Naval Research, FENA Focus Center, and other agencies.

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The above story is reprinted from materials provided by University of California - Riverside.

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Journal Reference:

1. J. Velasco, L. Jing, W. Bao, Y. Lee, P. Kratz, V. Aji, M. Bockrath, C. N. Lau, C. Varma, R. Stillwell, D. Smirnov, Fan Zhang, J. Jung, A. H. MacDonald. Transport spectroscopy of symmetry-broken insulating states in bilayer graphene. Nature Nanotechnology, 2012; DOI:10.1038/nnano.2011.251

Cooling Semiconductors by Laser Light

The experiments are carried out in the Quantop laboratories at the Niels Bohr Institute. The laser light that hits the semiconducting nanomembrane is controlled with a forest of mirrors. (Credit: Ola J. Joensen)

ScienceDaily (Jan. 22, 2012) — Researchers at the Niels Bohr Institute have combined two fields -- quantum physics and nano physics -- and this has led to the discovery of a new method for laser cooling semiconductor membranes. Semiconductors are vital components in solar cells, LEDs and many other electronics, and the efficient cooling of components is important for future quantum computers and ultrasensitive sensors. The new cooling method works quite paradoxically by heating the material! Using lasers, researchers cooled membrane fluctuations to minus 269 degrees C.

The results are published in the journal Nature Physics.

"In experiments, we have succeeded in achieving a new and efficient cooling of a solid material by using lasers. We have produced a semiconductor membrane with a thickness of 160 nanometers and an unprecedented surface area of 1 by 1 millimeter. In the experiments, we let the membrane interact with the laser light in such a way that its mechanical movements affected the light that hit it. We carefully examined the physics and discovered that a certain oscillation mode of the membrane cooled from room temperature down to minus 269 degrees C, which was a result of the complex and fascinating interplay between the movement of the membrane, the properties of the semiconductor and the optical resonances," explains Koji Usami, associate professor at Quantop at the Niels Bohr Institute.

From gas to solid

Laser cooling of atoms has been practiced for several years in experiments in the quantum optical laboratories of the Quantop research group at the Niels Bohr Institute. Here researchers have cooled gas clouds of cesium atoms down to near absolute zero, minus 273 degrees C, using focused lasers and have created entanglement between two atomic systems. The atomic spin becomes entangled and the two gas clouds have a kind of link, which is due to quantum mechanics. Using quantum optical techniques, they have measured the quantum fluctuations of the atomic spin.

"For some time we have wanted to examine how far you can extend the limits of quantum mechanics -- does it also apply to macroscopic materials? It would mean entirely new possibilities for what is called optomechanics, which is the interaction between optical radiation, i.e. light, and a mechanical motion," explains Professor Eugene Polzik, head of the Center of Excellence Quantop at the Niels Bohr Institute at the University of Copenhagen.

But they had to find the right material to work with.

Lucky coincidence

In 2009, Peter Lodahl (who is today a professor and head of the Quantum Photonic research group at the Niels Bohr Institute) gave a lecture at the Niels Bohr Institute, where he showed a special photonic crystal membrane that was made of the semiconducting material gallium arsenide (GaAs). Eugene Polzik immediately thought that this nanomembrane had many advantageous electronic and optical properties and he suggested to Peter Lodahl's group that they use this kind of membrane for experiments with optomechanics. But this required quite specific dimensions and after a year of trying they managed to make a suitable one.

"We managed to produce a nanomembrane that is only 160 nanometers thick and with an area of more than 1 square millimetre. The size is enormous, which no one thought it was possible to produce," explains Assistant Professor Søren Stobbe, who also works at the Niels Bohr Institute.

Basis for new research

Now a foundation had been created for being able to reconcile quantum mechanics with macroscopic materials to explore the optomechanical effects.

Koji Usami explains that in the experiment they shine the laser light onto the nanomembrane in a vacuum chamber. When the laser light hits the semiconductor membrane, some of the light is reflected and the light is reflected back again via a mirror in the experiment so that the light flies back and forth in this space and forms an optical resonator. Some of the light is absorbed by the membrane and releases free electrons. The electrons decay and thereby heat the membrane and this gives a thermal expansion. In this way the distance between the membrane and the mirror is constantly changed in the form of a fluctuation.

"Changing the distance between the membrane and the mirror leads to a complex and fascinating interplay between the movement of the membrane, the properties of the semiconductor and the optical resonances and you can control the system so as to cool the temperature of the membrane fluctuations. This is a new optomechanical mechanism, which is central to the new discovery. The paradox is that even though the membrane as a whole is getting a little bit warmer, the membrane is cooled at a certain oscillation and the cooling can be controlled with laser light. So it is cooling by warming! We managed to cool the membrane fluctuations to minus 269 degrees C," Koji Usami explains.

"The potential of optomechanics could, for example, pave the way for cooling components in quantum computers. Efficient cooling of mechanical fluctuations of semiconducting nanomembranes by means of light could also lead to the development of new sensors for electric current and mechanical forces. Such cooling in some cases could replace expensive cryogenic cooling, which is used today and could result in extremely sensitive sensors that are only limited by quantum fluctuations," says Professor Eugene Polzik.

Story Source:

The above story is reprinted from materials provided byUniversity of Copenhagen.

Note: Materials may be edited for content and length. For further information, please contact the source cited above.

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Journal Reference:

1. K. Usami, A. Naesby, T. Bagci, B. Melholt Nielsen, J. Liu, S. Stobbe, P. Lodahl, E. S. Polzik. Optical cavity cooling of mechanical modes of a semiconductor nanomembrane. Nature Physics, 2012;

Physicists identify room temperature quantum bits in widely used semiconductor

ScienceDaily (Nov. 2, 2011) — A discovery by physicists at UC Santa Barbara may earn silicon carbide -- a semiconductor commonly used by the electronics industry -- a role at the center of a new generation of information technologies designed to exploit quantum physics for tasks such as ultrafast computing and nanoscale sensing.

The research team discovered that silicon carbide contains crystal imperfections that can be controlled at a quantum mechanical level. The finding is published this week in the journal Nature.

The research group of David Awschalom, senior author, made the finding. Awschalom is director of UCSB's Center for Spintronics & Quantum Computation, professor of physics, electrical and computer engineering, and the Peter J. Clarke Director of the California NanoSystems Institute.

In conventional semiconductor-based electronic devices, crystal defects are often deemed undesirable because of their tendency to immobilize electrons by "trapping" them at a particular crystal location. However, the UCSB team discovered that electrons that become trapped by certain imperfections in silicon carbide do so in a way that allows their quantum states to be initialized, precisely manipulated, and measured using a combination of light and microwave radiation. This means that each of these defects meets the requirements for use as a quantum bit, or "qubit," which is often described as the quantum mechanical analog of a transistor, since it is the basic unit of a quantum computer.

"We are looking for the beauty and utility in imperfection, rather than struggling to bring about perfect order," said Awschalom, "and to use these defects as the basis for a future quantum technology."

Most crystal imperfections do not possess these properties, which are intimately tied to the atomic structure of a defect and the electronic characteristics of its semiconductor host, explained Awschalom. In fact, before this research, the only system known to possess these same characteristics was a flaw in diamond known as the nitrogen-vacancy center.

The diamond nitrogen-vacancy center is renowned for its ability to function as a qubit at room temperature, while many other quantum states of matter require an extremely cold temperature, near absolute zero. However, this center exists in a material that is difficult to grow and challenging to manufacture into integrated circuits.

In contrast, high-quality crystals of silicon carbide, multiple inches in diameter, are commonly produced for commercial purposes. They can be readily fashioned into a multitude of intricate electronic, optoelectronic, and electromechanical devices. In addition, the defects studied by Awschalom and his group are addressed using infrared light that is close in energy to the light used widely throughout modern telecommunications networks. And while several distinct defect types were studied at a range of temperatures, two of them were capable of room temperature operation, just like the diamond nitrogen-vacancy center.

The combination of these features makes silicon carbide, with its defects, an attractive candidate for future work seeking to integrate quantum mechanical objects with sophisticated electronic and optical circuitry, according to the researchers. This research fits within a wider effort at UCSB to engineer quantum devices by fostering collaboration between the fields of materials science and quantum physics.

While defects in silicon carbide may offer many technologically attractive qualities, an immense number of defects in other semiconductors are still left to be explored.

"Our dream is to make quantum mechanics fully engineerable," said William Koehl, lead author and a graduate student in the Awschalom lab. "Much like a civil engineer is able to design a bridge based on factors such as load capacity and length span, we'd like to see a day when there are quantum engineers who can design a quantum electronic device based on specifications such as degree of quantum entanglement and quality of interaction with the surrounding environment."

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The above story is reprinted from materials provided by University of California - Santa Barbara.

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Journal Reference:

William F. Koehl, Bob B. Buckley, F. Joseph Heremans, Greg Calusine, David D. Awschalom. Room temperature coherent control of defect spin qubits in silicon carbide. Nature, 2011; 479 (7371): 84 DOI: 10.1038/nature10562

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Graphene may gain an on-off switch, adding semiconductor to long list of material's achievements

ScienceDaily (June 17, 2011) — A team of researchers has proposed a way to turn the material graphene into a semiconductor, enabling it to control the flow of electrons with a laser "on-off switch."

Graphene is thinnest and strongest material ever discovered. It's a layer of carbon atoms only one-atom thick, but 200 times stronger than steel. It also conducts electricity extremely well and heat better than any other known material. It is almost completely transparent, yet so dense that not even atoms of helium can penetrate it. In spite of the impressive list of promising prospects, however, graphene appears to lack a critical property -- it doesn't have a "band gap."

A band gap is the basic property of semiconductors, enabling materials to control the flow of electrons. This on-off property is the foundation of computers, encoding the 0s and 1s of computer languages.

Now, a team of researchers at the National University of Córdoba and CONICET in Argentina; the Institut Catala de Nanotecnologia in Barcelona, Spain; and RWTH Aachen University, Germany; suggest that illuminating graphene with a mid-infrared laser could be a key to switch off conduction, thereby improving the possibilities for novel optoelectronic devices.

In an article featured in Applied Physics Letters, the researchers report on the first atomistic simulations of electrical conduction through a micrometer-sized graphene sample illuminated by a laser field. Their simulations show that a laser in the mid-infrared can open an observable band gap in this otherwise gapless material.

"Imagine that by turning on the light, graphene conduction is turned off, or vice versa. This would allow the transduction of optical into electrical signals," says Luis Foa Torres, the researcher leading this collaboration. "The problem of graphene interacting with radiation is also of current interest for the understanding of more exotic states of matter such as the topological insulators."

Story Source:

The above story is reprinted (with editorial adaptations by ScienceDaily staff) from materials provided by American Institute of Physics, via EurekAlert!, a service of AAAS.

Journal Reference:

Herna´n L. Calvo, Horacio M. Pastawski, Stephan Roche, Luis E. F. Foa Torres. Tuning laser-induced band gaps in graphene. Applied Physics Letters, 2011; 98 (23): 232103 DOI: 10.1063/1.3597412

Note: If no author is given, the source is cited instead.

Disclaimer: Views expressed in this article do not necessarily reflect those of ScienceDaily or its staff.

View the original article here

Graphene may gain an on-off switch, adding semiconductor to long list of material's achievements

ScienceDaily (June 17, 2011) — A team of researchers has proposed a way to turn the material graphene into a semiconductor, enabling it to control the flow of electrons with a laser "on-off switch."

Graphene is thinnest and strongest material ever discovered. It's a layer of carbon atoms only one-atom thick, but 200 times stronger than steel. It also conducts electricity extremely well and heat better than any other known material. It is almost completely transparent, yet so dense that not even atoms of helium can penetrate it. In spite of the impressive list of promising prospects, however, graphene appears to lack a critical property -- it doesn't have a "band gap."

A band gap is the basic property of semiconductors, enabling materials to control the flow of electrons. This on-off property is the foundation of computers, encoding the 0s and 1s of computer languages.

Now, a team of researchers at the National University of Córdoba and CONICET in Argentina; the Institut Catala de Nanotecnologia in Barcelona, Spain; and RWTH Aachen University, Germany; suggest that illuminating graphene with a mid-infrared laser could be a key to switch off conduction, thereby improving the possibilities for novel optoelectronic devices.

In an article featured in Applied Physics Letters, the researchers report on the first atomistic simulations of electrical conduction through a micrometer-sized graphene sample illuminated by a laser field. Their simulations show that a laser in the mid-infrared can open an observable band gap in this otherwise gapless material.

"Imagine that by turning on the light, graphene conduction is turned off, or vice versa. This would allow the transduction of optical into electrical signals," says Luis Foa Torres, the researcher leading this collaboration. "The problem of graphene interacting with radiation is also of current interest for the understanding of more exotic states of matter such as the topological insulators."

Story Source:

The above story is reprinted (with editorial adaptations by ScienceDaily staff) from materials provided by American Institute of Physics, via EurekAlert!, a service of AAAS.

Journal Reference:

Herna´n L. Calvo, Horacio M. Pastawski, Stephan Roche, Luis E. F. Foa Torres. Tuning laser-induced band gaps in graphene. Applied Physics Letters, 2011; 98 (23): 232103 DOI: 10.1063/1.3597412

Note: If no author is given, the source is cited instead.

Disclaimer: Views expressed in this article do not necessarily reflect those of ScienceDaily or its staff.

View the original article here